Electronics Letters · 1997 · 25 citations · 3 references
SiGe HBTs featuring a high quality oxide passivation show ideal Gummel plots and low 1/f noise with corner frequencies down to 300 Hz. The measured KB-factor of 2.6 × 10–10 µm2s is the lowest of any previously reported HBT. With an f⊤ of 40 GHz, the devices are ideal for low phase noise microwave oscillators. A simple 10 GHz microstrip resonator showed –100 dBc at 100 kHz off carrier.
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Low-frequency noise in UHV/CVD Si- and SiGe-base bipolar transistors
L.S. Vempati, John D. Cressler, J.A. Babcock et al. · 2002 · 22 citations