High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects

Abstract

From annealing experiments performed on both irradiated SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -Si structures and MOS devices, swift heavy ions-induced morphological oxide defects are proposed to possibly act as latent defects.