C. Petit

On the positive charge and interface states in metal-oxide-semiconductor capacitors

A. Meinertzhagen, C. Petit, G. Yard et al. · Journal of Applied Physics · 1996 · 37 citations

Engineering, Electrical Engineering, Materials Science +17

Fowler–Nordheim conduction in polysilicon (n+)-oxide–silicon (p) structures: Limit of the classical treatment in the barrier height determination

A. Hadjadj, G. Salace, C. Petit · Journal of Applied Physics · 2001 · 31 citations

Engineering, Electrical Engineering, Materials Science +17

Study of defects induced by high-electric-field stress into a thin gate oxide (11 nm) of metal-oxide-semiconductor capacitors

G. Salace, C. Petit, M. Jourdain et al. · Journal of Applied Physics · 1993 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n+)–oxide–silicon <i>(p)</i> structures: Effect of the oxide thickness

G. Salace, A. Hadjadj, C. Petit et al. · Journal of Applied Physics · 1999 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

Low voltage stress induced leakage currents and surface states in ultrathin (1.2–2.5 nm) oxides

A. Meinertzhagen, C. Petit, D. Zander et al. · Journal of Applied Physics · 2002 · 25 citations

Engineering, Electrical Engineering, Materials Science +17