Concepedia
Statistics
Publications
15
Citations
324
H-Index
12
Active since
1991
Affiliations
Université de Reims Champagne-Ardenne(Current)
Centre National de la Recherche Scientifique
Institut d'électronique de microélectronique et de nanotechnologie
Laboratoire des Technologies de la Microélectronique
Institut Supérieur de l'Électronique et du Numérique
G. Salace is an author at Université de Reims Champagne-Ardenne specializing in materials science, semiconductor materials, and engineering.
Publications per year
1991–2006
Charging effects of MgO under electron bombardment and nonohmic behavior of the induced specimen current
J. Cazaux, Kyoung-Hak Kim, O. Jbara et al. · Journal of Applied Physics · 1991 · 50 citations
Natural Sciences, Materials Engineering, Materials Science +17
Generation of Si–SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures
D. Vuillaume, Abdellah Mir, R. Bouchakour et al. · Journal of Applied Physics · 1993 · 36 citations
Engineering, Electrical Engineering, Materials Science +17
Fowler–Nordheim conduction in polysilicon (n+)-oxide–silicon (p) structures: Limit of the classical treatment in the barrier height determination
A. Hadjadj, G. Salace, C. Petit · Journal of Applied Physics · 2001 · 31 citations
Study of defects induced by high-electric-field stress into a thin gate oxide (11 nm) of metal-oxide-semiconductor capacitors
G. Salace, C. Petit, M. Jourdain et al. · Journal of Applied Physics · 1993 · 29 citations
Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n+)–oxide–silicon <i>(p)</i> structures: Effect of the oxide thickness
G. Salace, A. Hadjadj, C. Petit et al. · Journal of Applied Physics · 1999 · 27 citations
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