R. Bouchakour

A one transistor cell on bulk substrate (1T-Bulk) for low-cost and high density eDRAM

R. Ranica, A. Villaret, P. Malinge et al. · 2004 · 39 citations

Bulk Silicon Substrate, High-density Edram, Engineering +18

Generation of Si–SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures

D. Vuillaume, Abdellah Mir, R. Bouchakour et al. · Journal of Applied Physics · 1993 · 36 citations

Materials Science, Semiconductors, Electrical Engineering +12

Skin alcohol perspiration measurements using MOX sensors

Bruno Lawson, Khalifa Aguir, T. Fiorido et al. · Sensors and Actuators B Chemical · 2018 · 33 citations · Full text

Sensor Application, Engineering, Sensors +3

Capture cross section of Si-SiO2 interface states generated during electron injection

D. Vuillaume, R. Bouchakour, M. Jourdain et al. · Applied Physics Letters · 1989 · 17 citations

Semiconductors, Semiconductor Technology, Semiconductor Device +14

Scaled 1T-bulk devices built with CMOS 90nm technology for low-cost edram applications

R. Ranica, A. Villaret, P. Malinge et al. · 2005 · 17 citations

Engineering, Emerging Memory Technology, Computer Architecture +19