P. Malinge

A capacitor-less DRAM cell on 75nm gate length, 16nm thin fully depleted SOI device for high density embedded memories

R. Ranica, A. Villaret, C. Fenouillet-Béranger et al. · 2005 · 58 citations

High Density, Non-volatile Memory, Electrical Engineering +11

$1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared

Jonathan S. Steckel, E. Josse, Andras G. Pattantyus‐Abraham et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 47 citations

Optical Materials, Quantum Photonics, Shortwave Infrared +30

A one transistor cell on bulk substrate (1T-Bulk) for low-cost and high density eDRAM

R. Ranica, A. Villaret, P. Malinge et al. · 2004 · 39 citations

Bulk Silicon Substrate, High-density Edram, Engineering +18

High performance bulk planar 20nm CMOS technology for low power mobile applications

Huiling Shang, S. Jain, E. Josse et al. · 2012 · 26 citations

Low-power Electronics, High Density, Electrical Engineering +14

Scaled 1T-bulk devices built with CMOS 90nm technology for low-cost edram applications

R. Ranica, A. Villaret, P. Malinge et al. · 2005 · 17 citations

Engineering, Emerging Memory Technology, Computer Architecture +19