IEEE Microwave and Wireless Components Letters · 2008 · 37 citations · 12 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsMicrowave EngineeringHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave MeasurementsRadio-frequency Integrated CircuitsHigh-electron-mobility TransistorsHigh-gain AmplifiersMicrowave Amplifier DesignMicrowave DevicesMillimeter-wave Integrated CircuitsMillimeter-wave TransistorsMonolithic Microwave Integrated Circuit AmplifiersMonolithic Microwave Integrated Circuit Design
In this letter, we describe the design, fabrication, simulation, and measured performance of a single-stage and three-stage 320 GHz amplifier using Northrop Grumman Corporation's (NGC) 35-nm InP high electron mobility transistor submillimeter-wave monolithic integrated circuit (S-MMIC) process. On-wafer S-parameter measurements using an extended waveguide band WR3 vector network analyzer system were performed from 210-345 GHz. We measured 5 dB of gain for the single-stage amplifier at 340 GHz and 13-15 of gain from 300-345 GHz for the three-stage S-MMIC amplifier.
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Demonstration of a S-MMIC LNA with 16-dB Gain at 340-GHz
W.R. Deal, X. B. Mei, V. Radisic et al. · 2007 · 55 citations
Engineering, Electrical Engineering, Electronic Materials +16
220 GHz Low-Noise Amplifier Modules for Radiometric Imaging Applications
A. Tessmann, Arnulf Leuther, M. Kuri et al. · 2006 · 53 citations
Beyond G-band: a 235 GHz InP MMIC amplifier
Douglas Dawson, Lorene Samoska, A. Fung et al. · IEEE Microwave and Wireless Components Letters · 2005 · 41 citations
35-nm InP HEMT SMMIC Amplifier With 4.4-dB Gain at 308 GHz
X. B. Mei, Wayne Yoshida, W.R. Deal et al. · IEEE Electron Device Letters · 2007 · 40 citations