Static and dynamic characterization of a >13kV SiC p-ETO device

Abstract

This study addresses the transient and steady-state performance of a >13 kV SiC p-ETO. The developed SiC p-ETO is based on a 1 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , 15 kV SiC p-GTO with an extremely low differential resistance. Static performance of the device, including the on-state voltage drop at different temperatures and different currents is carried out in this paper. Furthermore, transient performance of the device, including the turn off energy and also the Safe Operating Area (SOA) of the device has been studied. Also, the superior performance of the p-type SiC-ETO has been exploited to design and implement a solid-state circuit breaker. The studies verify the superiority of the SiC pETO compared to other solid state devices for this application.