2002 · 91 citations · 2 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesIntegrated Circuit DesignIntegrated Circuit DevicesIntegrated Circuit FabricationInterconnect ArchitectureInterconnect DesignInterconnect TechnologyChemical Mechanical PlanarizationDamascene ProcessDual Damascene ProcessEtching MasksInterconnect FabricationInterconnection TechniquesManufacturingPhotolithographic Patterning
Escalating density, performance, and (perhaps most importantly) manufacturing requirements associated with ULSI semiconducting wiring, necessitate a metamorphosis in interconnection technology. To meet these needs, an inlaid fully integrated wiring technology called Dual Damascene has been designed and demonstrated at IBM's Essex Junction, Vermont, facility. A subset of the technology's features has been successfully implemented in the manufacture of IBM's 4-Mb DRAM. The Dual Damascene structure achieved is a planar, monolithic-metal interconnect, comprising a vertical metal stud and horizontal metal interconnect, both embedded in an insulator matrix. The complete Dual Damascene technology features a unique process sequence, chemical-mechanical insulator planarization, stacked photolithographic masks, clustered stud and interconnect etch, concurrent stud and interconnect metal fill, and chemical-mechanical metal etchback.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
2
Submicron wiring technology with tungsten and planarization
Carter Kaanta, W. Cote, John Cronin et al. · 1987 · 28 citations