Journal of Applied Physics · 2002 · 31 citations · 26 references
Natural SciencesMaterials SciencePhysicsPhysical ChemistrySpectroscopySurface ScienceAb Initio MethodsRadiation ChemistrySemiconductor SurfacesSurface PhysicsDesorptionDissociation Rate ConstantsElectron Beam Irradiation EffectsGallium Nitride (Gan) MaterialsIrradiation DamageIrradiation Effects On MaterialsSurface Desorption
The dissociation of the MgH complex in GaN under low-energy electron-beam irradiation (LEEBI) and its reassociation during postirradiation annealing were measured using infrared vibration spectroscopy. The dissociation rate exhibits a pronounced dependence on the H isotope, being about 4 times greater for protium than deuterium. Reassociation occurs at temperatures <200 °C, which may be problematic for device applications of LEEBI. We consider possible reaction paths based on atomic configurations from density-functional theory and bond-excitation mechanisms investigated in surface-desorption studies, thereby arriving at a model of the evolution consistent with the experimental results.
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Desorption from Metal Surfaces by Low-Energy Electrons
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