Nanolithography using ultrasonically assisted development of calixarene negative electron beam resist

Abstract

Negative resist image distortion is caused by resist swelling during development and is a major problem in ultrahigh resolution electron beam lithography. This problem has been overcome through the use of ultrasonically assisted development. In addition, exposure dose latitude is increased by 50% compared to conventional dip development, due to the improvement in contrast. These advantages have been exploited in order to realize ∼6 nm wide lines in calixarene resist.