Effects of the environment on point-defect energy levels in semiconductors

J. D. Dow, Roland E. Allen, Otto F. Sankey, JEAN‐PIERRE BUISSON, H.P. Hjalmarson

Journal of Vacuum Science and Technology · 1981 · 19 citations · 0 references

Concepts

Abstract

Deep impurity energy levels within the band gap of a semiconductor can be altered and manipulated by changing the environment of the impurity. The effects of a second impurity, an interface, and a surface have been evaluated for substitutional deep levels in a variety of semiconductor hosts.