Roland E. Allen - Concepedia

Author

Roland E. Allen

Also Known As

Allen, R. E., Allen, Roland, Allen, Roland E., Lei, Minjie, R E Allen, R. Allen, R. E. ALLEN, R. E. Allen, R.E. Allen, ROLAND ALLEN

410

Publications

Citations

H-Index

118

Concepts

All Affiliations

Texas A&M University The University of Texas at Austin University of Illinois Urbana-Champaign Arizona State University University of Notre Dame

About

Roland E. Allen is an author at Texas A&M University specializing in engineering, physics, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	35	78	3.9K
2	Applied Physics	32	70	3.6K
3	Natural Sciences	26	40	2.3K
4	Biomolecular Engineering	1	1	25
5	Chemical Engineering	1	1	56

Roland E. Allen

Publications

4.3K

Citations

H-Index

Page 1

	Year	Citations
Electronic structure of the semimetals Bi and Sb Yi Liu, Roland E. Allen Physical review. B, Condensed matter EngineeringSemimetals BiElectronic PropertiesElectronic StructureTunneling Microscopy	1995	363
Studies of Vibrational Surface Modes. I. General Formulation Roland E. Allen, G. P. Alldredge, F. W. de Wette Physical review. B, Solid state Crystal StructureGeneral FormulationEngineeringSurface WaveMechanical Engineering	1971	284
Studies of Vibrational Surface Modes. II. Monatomic fcc Crystals Roland E. Allen, G. P. Alldredge, F. W. de Wette Physical review. B, Solid state Materials ScienceMonatomic Fcc CrystalsEngineeringSoft ModePhysics	1971	263
Calculation of Dynamical Surface Properties of Noble-Gas Crystals. I. The Quasiharmonic Approximation Roland E. Allen, F. W. de Wette Physical Review EngineeringStatic DisplacementsSolid-state ChemistryComputational ChemistryChemistry	1969	203
Role of surface antisite defects in the formation of Schottky barriers Roland E. Allen, John D. Dow Physical review. B, Condensed matter Materials ScienceSemiconductorsIi-vi SemiconductorEngineeringPhysics	1982	137
Atomic forces from electronic energies via the Hellmann-Feynman theorem, with application to semiconductor (110) surface relaxation Otto F. Sankey, Roland E. Allen Physical review. B, Condensed matter EngineeringElectronic EnergiesComputational ChemistryIi-vi Compound SemiconductorsElectronic Structure	1986	136
Calculation of Dynamical Surface Properties of Noble-Gas Crystals. II. Molecular Dynamics Roland E. Allen, F. W. de Wette, A. Rahman Physical Review EngineeringStatic DisplacementsComputational ChemistryChemistryMolecular Dynamics	1969	118
Surface defects and Fermi‐level pinning in InP J. D. Dow, Roland E. Allen Journal of Vacuum Science and Technology EngineeringMaterial InnovationVacuum DeviceStructural MaterialsMaterials Fabrication	1982	97
Geometry and electronic structure of the arsenic vacancy on GaAs(110) G. Lengel, R. Wilkins, Geoffrey W. Brown, Physical Review Letters Ii-vi SemiconductorQuantum ScienceDefect LevelsEngineeringTunneling Microscopy	1994	96
Unified theory of point–defect electronic states, core excitons, and intrinsic electronic states at semiconductor surfaces Roland E. Allen, J. D. Dow Journal of Vacuum Science and Technology Charge ExcitationsEngineeringElectronic StructurePoint–defect Electronic StatesSemiconductor Nanostructures	1981	94

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