Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP‐based quantum well lasers

Abstract

Abstract The improved thermal stability of InGaAlAs‐based lasers compared with InGaAs‐based lasers for 1.5 μm operation is investigated using a combination of low temperature and high pressure techniques. The results indicate that the improved performance of InGaAlAs‐based devices is due to a reduction in the contribution of the non‐radiative Auger recombination current, I Aug , to the total threshold current, I th , in the InGaAlAs devices. This is due to the higher conduction band offset made possible with the InGaAlAs system which results in a lower hole density in the quantum wells at threshold. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)