Novel Solution Process for High-Mobility C$_{60}$ Fullerene Field-Effect Transistors

Abstract

Solution-processed C60 fullerene field-effect transistors with high electron mobility were demonstrated by using a novel drying process. Highly uniform and flat C60 layers were prepared from a C60 solution when the solution was rapidly dried in a vacuum chamber. Field-effect transistors with solution-deposited C60 active layers showed electron mobility of up to 0.86 cm2 V-1 s-1, threshold voltage of 3 V, subthreshold slope of 0.67 V/decade, and a current on/off ratio of 4×106. The mobilities of solution-deposited C60 transistors were comparable to those of vacuum-deposited C60 transistors.