1984 · 18 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCmos Circuit DesignIntegrated Circuit DesignMemory Subsystem DesignElectron MobilityHigh-electron-mobility TransistorsHigh-speed Circuit DesignHigh-speed Cmos DesignHigh-speed Logic DesignHigh-speed OperationMemory Circuit DesignStatic Random-access Memory Design
HIGH SPEED LSIs have been required for high performance mainframe computers. The development of High Electron Mobility Transistor (HEMT) is felt to be applicable for high-speed logic operation. This paper will report on the design of a 1K x 1b fully static RAM using HEMT. The RAM was constructed with Enhancement/Depletion (E/D) type DCFL circuitry, using 1.5μm gate devices, and 3μm line process.
3
High Electron Mobility Transistor Logic
Takashi Mimura, K. Joshin, S. Hiyamizu et al. · Japanese Journal of Applied Physics · 1981 · 121 citations
High electron mobility transistors for LSI circuits
Takeshi Mimura, K. Nishiuchi, Masayuki Abe et al. · 1983 · 17 citations
HEMT LSI Technology for High Speed Computers
Masayuki Abe, Takeshi Mimura, K. Nishiuchi et al. · 1983 · 16 citations
Engineering, Computer Engineering, Electrical Engineering +17