High electron mobility transistors for LSI circuits

Abstract

Current work on HEMT (High Electron Mobility Transistor) LSI technology is presented. Controllability in device parameters of the HEMT is crucially important, and is discussed in the context of LSI capability. Simple device modeling of HEMTs, taking into account the velocity saturation effects, is carried out to provide reasonably accurate predictions of device performance. Master-slave flip-flop divide-by-two circuits which work at the maximum clock frequency of 8.9 GHz with 2.8 mW/gate power dissipation are described.