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Dopant penetration effects on polysilicon gate HfO/sub 2/ MOSFET's
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2002
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Electrical EngineeringSemiconductor DeviceEngineeringNanoelectronicsBias Temperature InstabilityApplied PhysicsDopant PenetrationDopant Penetration EffectsBoron PenetrationSemiconductor Device FabricationSignificant Boron PenetrationMicroelectronicsSilicon On InsulatorElectrical Insulation
Effect of dopant penetration on electrical characteristics of polysilicon gate HfO/sub 2/ gate dielectric MOSFETs has been studied quantitatively for the first time. Significant boron penetration was observed at high temperature dopant activation, which degrades not only flatband voltage (V/sub fb/) but channel carrier mobility. Surface nitridation prior to HfO/sub 2/ deposition can suppress boron penetration along with equivalent oxide thickness (EOT) reduction.