An (un)solvable problem in SIMS: B-interfacial profiling

A model for the segregation and pileup of boron at the SiO2/Si interface during the formation of ultrashallow p+ junctions

Akio Shima, Tomoko Jinbo, N. Natsuaki et al. · Journal of Applied Physics · 2001 · 39 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Elastic recoil detection with single atomic layer depth resolution

G. Dollinger, C.M. Frey, A. Bergmaier et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1998 · 36 citations

Natural Sciences, Physics, Atomic Physics +7

Modeling of bombardment induced oxidation of silicon

H. De Witte, W. Vandervorst, R. Gijbels · Journal of Applied Physics · 2001 · 16 citations

Natural Sciences, Materials Engineering, Materials Science +16