Thermally stimulated current studies on neutron irradiation induced defects in GaN

Abstract

The evaluation of the neutron irradiation induced defects in GaN is studied using a thermally stimulated current (TSC) method with excitation above (below) the energy band gap using ultraviolet (blue, green, red, and infrared) emitting diodes. Annealing at 1000°C, a broad TSC spectrum for excitation by the ultraviolet light is resolved by five traps, P1 (ionization energy is 200meV), P2 (270meV), P3 (380meV), P4 (490meV), and P5 (595meV). Infrared illumination shows a remarkable reduction in TSC for the P2 and P3 traps, indicating the photoquenching behavior. The possible origins of the observed five traps are discussed.