Determination of InN–GaN heterostructure band offsets from internal photoemission measurements

Abstract

Band discontinuities at the InN–GaN heterointerface are experimentally determined from internal photoemission spectroscopy measurements on n+ InN on GaN epilayers. The photocurrent shows two threshold energies, one at 1.624eV and the other at 2.527eV. From these, we obtain the band offsets ΔEv=0.85eV and ΔEc=1.82eV.