On the field effect in polycrystalline CdSe thin-film transistors

Abstract

Based on the grain barrier model of Levinson an expression of the off-current Ioff of a thin-film transistor is derived.The dependence of Ioff on the donor concentration ND and the semiconductor thickness ds is discussed and compared to experimental data. It is shown that NDds has to be smaller than the grain-boundary trap concentration in order to obtain enhancement thin-film transistors completely turned off at VG=0.