Germanium content and strain in Si1−xGex alloys characterized by Raman spectroscopy

Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits

Ingrid De Wolf · Semiconductor Science and Technology · 1996 · 970 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of static uniaxial stress on the Raman spectrum of silicon

E. Anastassakis, A. Pinczuk, E. Burstein et al. · Solid State Communications · 1970 · 598 citations

Natural Sciences, Materials Science, Physics +12

Thermal and Electrical Properties of Heavily Doped Ge-Si Alloys up to 1300°K

John P. Dismukes, Lars‐Gösta Ekström, E. F. Steigmeier et al. · Journal of Applied Physics · 1964 · 585 citations

Engineering, Materials Engineering, Materials Science +17

Measurements of alloy composition and strain in thin Ge<i>x</i>Si1−<i>x</i> layers

J. C. Tsang, P. M. Mooney, F. H. Dacol et al. · Journal of Applied Physics · 1994 · 427 citations

Natural Sciences, Materials Science, Physics +15

Piezo-Raman measurements and anharmonic parameters in silicon and diamond

E. Anastassakis, A. Cantarero, M. Cardona · Physical review. B, Condensed matter · 1990 · 373 citations

Natural Sciences, Materials Science, Physics +17