Low temperature growth of gallium nitride

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	Year	Citations
Simulated annealing analysis of Rutherford backscattering data N.P. Barradas, C. Jeynes, R.P. Webb Applied Physics Letters EngineeringData Collection TimePhysicsSimulated AnnealingNuclear Data	1997	633
Electrical and Optical Properties of rf-Sputtered GaN and InN H.J. Hovel, J. J. Cuomo Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineeringRf Semiconductor	1972	177
Photoconductive a-GaN prepared by reactive sputtering Shuichi Nonomura, Satoshi Kobayashi, Tamihiro Gotoh, Journal of Non-Crystalline Solids PhotonicsEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device	1996	41
The growth of highly resistive gallium nitride films E. Lakshmi, B. Mathur, Arnab Bhattacharya, Thin Solid Films Materials ScienceEngineeringAluminum Gallium NitrideApplied PhysicsGallium Oxide	1980	40
High-quality GaN grown by reactive sputtering J. Ross Materials Letters Materials EngineeringElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	1991	36
Photoluminescence study of nano-crystalline GaN and AlN grown by reactive sputtering K. Abe, Shuichi Nonomura, Satoshi Kobayashi, Journal of Non-Crystalline Solids Materials ScienceAluminium NitridePhotoluminescenceEngineeringNano-crystalline Gan	1998	27

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