Applied Physics Letters · 1984 · 127 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSurface PhysicsCapacitance-voltage CharacteristicsCapacitance-voltage MeasurementsMetal-semiconductor InterfacesSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky BarriersSchottky ContactsWork Function
The Schottky-barrier height φB of ideal (no interfacial oxide) contacts to GaAs has been measured for a diverse group of eleven metals, Cu, Pd, Ag, Au, Al, Ti, Pb, Bi, Ni, Cr, and Fe, by using current-voltage and capacitance-voltage techniques. The contacts were formed by metal evaporation in ultrahigh vacuum onto clean (100) surfaces of both n-type and p-type GaAs. For n-type contacts φB ranged from 0.96 to 0.72 eV, in the metal order listed above; for p-type contacts φB ranged from 0.45 to 0.62 eV. No simple correlation was found between φB and metal work function nor between φB and the chemical reactivity at the metal-GaAs interface.
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Unified defect model and beyond
W. E. Spicer, I. Lindau, Perry Skeath et al. · Journal of Vacuum Science and Technology · 1980 · 646 citations
Interface chemistry of metal-GaAs Schottky-barrier contacts
J. R. Waldrop, R. W. Grant · Applied Physics Letters · 1979 · 190 citations