AlGaAs/GaAs SAM-avalanche photodiode: An X-ray detector for low energy photons

Multiplication noise in uniform avalanche diodes

R.J. McIntyre · IEEE Transactions on Electron Devices · 1966 · 1.4K citations

Engineering, Electrical Engineering, Circuit Theory +14

Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio

Federico Capasso, W. T. Tsang, Albert L. Hutchinson et al. · Applied Physics Letters · 1982 · 306 citations

Engineering, Electrical Engineering, Physics +17

Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratio

Federico Capasso, Won−Tien Tsang, Graeme Williams · IEEE Transactions on Electron Devices · 1983 · 219 citations

Engineering, Electrical Engineering, Physics +16

The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements

G. E. Bulman, V. M. Robbins, G. E. Stillman · IEEE Transactions on Electron Devices · 1985 · 145 citations

Engineering, Electrical Engineering, Materials Science +15

Evaluation of epitaxial n-GaAs for nuclear radiation detection

J.E. Eberhardt, R.D. Ryan, A. J. Tavendale · Nuclear Instruments and Methods · 1971 · 101 citations

Engineering, Electrical Engineering, Nuclear Engineering +14