Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2006 · 15 citations · 22 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsCarrier Transport In Quantum WellsElectron Leakage MechanismsLeakageNumerical Device SimulationQuantum Well HeterostructuresQuantum Well LasersQuantum Well StructuresThreshold Current Reduction
The effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with Al<sub>0.2</sub>Ga<sub>0.8</sub>N or AlInGaN electronic blocking layers have been investigated numerically by employing an advanced device simulation program. The simulation results indicate that the characteristics of InGaN quantum-well laser can be improved by using the AlInGaN electronic blocking layer. When the aluminum and indium compositions in AlInGaN electronic blocking layer are appropriately designed, the built-in charge density at the interface between InGaN barrier and AlInGaN electronic blocking layer can be reduced. Under this circumstance, the electron leakage and threshold current can be decreased obviously as compared with the laser structure with conventional Al<sub>0.2</sub>Ga<sub>0.8</sub>N electronic blocking layer when the built-in polarization is taken into account in our simulation. On the other hand, the AlInGaN electronic blocking layer also gives higher refractive index than the Al<sub>0.2</sub>Ga<sub>0.8</sub>N electronic blocking layer. Therefore, higher quantum-well optical confinement factor can be obtained by using the AlInGaN electronic blocking layer as well.
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Band parameters for nitrogen-containing semiconductors
I. Vurgaftman, J. R. Meyer · Journal of Applied Physics · 2003 · 2.7K citations