A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.5K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

Yukio Narukawa, Yoichi Kawakami, Mitsuru Funato et al. · Applied Physics Letters · 1997 · 925 citations

Engineering, Materials Engineering, Materials Science +17

Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

Isamu Akasaki Isamu Akasaki, Hiroshi Amano · Japanese Journal of Applied Physics · 1997 · 661 citations · Full text

Engineering, Materials Engineering, Materials Science +17

White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

Jinn‐Kong Sheu, Shoou‐Jinn Chang, Cheng‐Chien Kuo et al. · IEEE Photonics Technology Letters · 2003 · 655 citations

Engineering, Electrical Engineering, Materials Science +17

Origin of Luminescence from InGaN Diodes

K.P. O’Donnell, Robert Martin, P. G. Middleton · Physical Review Letters · 1999 · 490 citations

Natural Sciences, Materials Engineering, Materials Science +17