Nanoscale patterning in high resolution HSQ photoresist by interferometric lithography with tabletop extreme ultraviolet lasers

Abstract

Arrays of nanodots and nanoholes were patterned with a highly coherent tabletop 46.9nm laser on high resolution hydrogen silsesquioxane photoresist using multiple exposure interferometric lithography. The authors observed for λ=46.9nm radiation a penetration depth in excess of 150nm. This laser-based extreme ultraviolet interferometric setup allows printing of 0.5×0.5mm2 areas with different nanoscale patterns using a compact tabletop system and exposure times of tens of seconds.