First room-temperature cw operation of a GaInAsP/InP light-emitting diode on a silicon substrate

Abstract

We report in this letter the first successful fabrication of an InP-GaInAsP light-emitting diode, emitting at 1.15 μm grown by low-pressure metalorganic chemical vapor deposition on a silicon substrate. The device has been operated under continuous wave operation at room temperature for 24 h (with an injection current of 200 mA), and showed no degradation.