The effects of nitrogen partial pressure on the properties of the TaNx films deposited by reactive magnetron sputtering

Diffusion barrier property of TaN between Si and Cu

Takeo Oku, Eiji Kawakami, Masaki Uekubo et al. · Applied Surface Science · 1996 · 240 citations

Diffusion Barrier Property, Engineering, Physics +5

Development of miniature filters for wireless applications

K.M. Lakin, G.R. Kline, K.T. McCarron · IEEE Transactions on Microwave Theory and Techniques · 1995 · 198 citations

Miniature Filters, Electrical Engineering, Engineering +12

Effects of Nitrogen, Methane, and Oxygen on Structure and Electrical Properties of Thin Tantalum Films

D. Gerstenberg, C. J. Calbick · Journal of Applied Physics · 1964 · 179 citations

Engineering, Tantalum Films, Solid-state Chemistry +19

Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si

Mei‐Hui Tsai, Shuo Sun, C.E. Tsai et al. · Journal of Applied Physics · 1996 · 174 citations

Engineering, Diffusion Barrier Properties, Vacuum Device +17

Predicting thin-film stoichiometry in reactive sputtering

S. Berg, T. Larsson, C. Nender et al. · Journal of Applied Physics · 1988 · 173 citations

Materials Science, Materials Engineering, Compound Film +9