Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene

Abstract

Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C60 and pentacene. Three types of device structures in the C60∕pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of C60 and pentacene, the mobility μ in p-channel operation was estimated to be 6.8×10−2cm2V−1s−1, while the μ in n-channel operation was 1.3×10−3cm2V−1s−1. This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design.