Fabrication and characterization of C60 thin-film transistors with high field-effect mobility

Abstract

We report an improvement in performance of C60 thin-film field-effect transistors (TFTs) fabricated by molecular-beam deposition. Devices, fabricated and characterized under a high vacuum without exposure to air, routinely showed current on/off ratios >108 and field-effect mobilities in the range of 0.5–0.3 cm2/V s. The mobility obtained is close to that derived from the photocurrent measurements on C60 thin films and comparable to a very high value among n-type organic TFTs.