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On the integration of CMOS with hybrid crystal orientations
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2004
Year
Unknown Venue
Electrical EngineeringEngineeringVlsi DesignIntegration IssuesNanoelectronicsMixed-signal Integrated CircuitComputer EngineeringHybrid Orientation TechnologyHybrid Crystal OrientationsMicroelectronicsDopant Implantation
Design and integration issues have been investigated for the hybrid orientation technology (HOT), i.e. device isolation, epitaxy and dopant implantation. Ring oscillators using HOT CMOS have been demonstrated for the first time, with L/sub poly/ about 85nm and t/sub ox/=2.2nm, resulting in 21% improvement compared with control CMOS on (100) orientations.