Applied Physics Letters · 2008 · 49 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDielectricsMetal Oxide NanomaterialsNanoelectronicsSemiconductor Device MaterialsSemiconductor Thin FilmsThin-film TransistorsElectronic Properties Of Metal Oxide NanostructuresHybrid Thin-film TransistorsOxide Thin-film TransistorsSemiconductor Oxide Thin FilmsSuperlattice FormationSuperlattice MaterialsThin Oxide FilmsThin Oxide Layers
We report on the fabrication of top-gate ZnO thin-film transistors (TFTs) with organic and inorganic nanohybrid dielectric layers that take superlattice form in their inside structure. The nanohybrid dielectrics were prepared by the alternate deposition of organic self-assembled monolayer and oxide monolayer on sputter-deposited ZnO channel. With a 22-nm-thin AlOx-based hybrid dielectric layer (∼130nFcm2), our ZnO TFT showed a field mobility of 0.36cm2Vs operating at 8V, while the mobility increased up to 0.66cm2Vs with a 22-nm-thin AlOx-based/TiOx-based/AlOx-based (5.5nm11nm5.5nm and ∼220nFcm2) triple hybrid layer under 2V operation. Since both ZnO-TFTs display little gate hysteresis, we conclude that our nanohybrid dielectric approach is promising to achieve a gate-stable low voltage top-gate ZnO-TFTs.
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