Influence of indium on the electronic states in GaInNAs/GaAs quantum well structures

Abstract

We use room-temperature photoreflectance spectroscopy to investigate the influence of indium on the electronic structure of Ga1−xInxNyAs1−y/GaAs multiple quantum wells. To fit our experimental data, a semiempirical theoretical model based on the band anticrossing Hamiltonian is successfully applied. Thus, we can extract some information about the Hamiltonian, in particular, the dependence of the coupling parameter CNM on the In concentration in GaInNAs. CNM is shown to decrease with increasing indium mole fraction, confirming theoretical predictions.