Beam profile reflectometry: A new technique for dielectric film measurements

Abstract

We describe a new technique for measuring the thickness and optical constants of dielectric, semiconducting, and thin metal films. Beam profile reflectometry provides excellent precision for films as thin as 30 Å and as thick as 20 000 Å. The technique is also capable of simultaneous 2 and 3 parameter measurements and it performs all measurements with a submicron spot size.