Dependence of electronic properties of polysilicon grain size and intragrain defects

Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K

W. C. Dash, Roger H. Newman · Physical Review · 1955 · 1K citations

Natural Sciences, Materials Science, Condensed Matter Physics +16

Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination

H.C. Card, E.S. Yang · IEEE Transactions on Electron Devices · 1977 · 274 citations

Engineering, Materials Engineering, Materials Science +17

Theory of the electrical and photovoltaic properties of polycrystalline silicon

Amal K. Ghosh, Charles Fishman, Tom Feng · Journal of Applied Physics · 1980 · 249 citations

Engineering, Electrical Engineering, Materials Science +17

Diffusion lengths in solar cells from short-circuit current measurements

E. D. Stokes, T. L. Chu · Applied Physics Letters · 1977 · 141 citations

Engineering, Electrical Engineering, Materials Science +17

Photocurrent and diffusion lengths at the vicinity of grain boundaries (g.b.) in N and P-type polysilicon. Evaluation of the g.b. recombination velocity)

J. Oualid, M. Bonfils, J.P. Crest et al. · Revue de Physique Appliquée · 1982 · 26 citations · Full text

Natural Sciences, Electrical Engineering, Materials Science +13