J. Oualid

Dependence of electronic properties of polysilicon grain size and intragrain defects

G. Mathian, H. Amzil, M. Zehaf et al. · Solid-State Electronics · 1983 · 53 citations

Natural Sciences, Materials Engineering, Materials Science +16

Influence of illumination on the grain boundary recombination velocity in silicon

J. Oualid, C. M. Singal, J. Dugas et al. · Journal of Applied Physics · 1984 · 46 citations

Engineering, Materials Engineering, Materials Science +17

A model of the dependence of photovoltaic properties on effective diffusion length in polycrystalline silicon

J. Dugas, J. Oualid · Solar Cells · 1987 · 27 citations

Engineering, Materials Engineering, Materials Science +16

Photocurrent and diffusion lengths at the vicinity of grain boundaries (g.b.) in N and P-type polysilicon. Evaluation of the g.b. recombination velocity)

J. Oualid, M. Bonfils, J.P. Crest et al. · Revue de Physique Appliquée · 1982 · 26 citations · Full text

Natural Sciences, Electrical Engineering, Materials Science +13

CdZnSCdS befilm solar photocells

S. Martinuzzi, J. Oualid, D. Sarti et al. · Thin Solid Films · 1978 · 18 citations

Engineering, Materials Engineering, Materials Science +12