Photoluminescence study of the shallow donor neutralization in GaAs(Si) by atomic hydrogen

Abstract

Atomic hydrogen in silicon-implanted GaAs samples is studied by photoluminescence. The near-band-gap luminescence of GaAs samples subjected to a hydrogen plasma reveals the neutralization effect of the shallow donors. The photoluminescence intensity increases after hydrogen plasma treatment. However, the donor-related luminescence is drastically reduced, indicating a smaller shallow donor concentration. After a thermal anneal (400 °C, 15 min), the original intensities of donor-related lines are restored. We confirm the model of an electrically inactive hydrogen-donor complex and rule out compensating defects created by the plasma treatment.