Mechanisms of SiC growth by alternate supply of SiH2Cl2 and C2H2

High-field transport in wide-band-gap semiconductors

D. K. Ferry · Physical review. B, Solid state · 1975 · 263 citations

Engineering, Materials Science, Condensed Matter Physics +16

Growth and Properties of β-SiC Single Crystals

W. E. Nelson, F. A. Halden, A. Rosengreen · Journal of Applied Physics · 1966 · 229 citations

Engineering, Materials Engineering, Materials Science +17

Conversion of Si to epitaxial SiC by reaction with C2H2

C. J. Mogab, H. J. Leamy · Journal of Applied Physics · 1974 · 137 citations

Engineering, Materials Engineering, Materials Science +17

Atomic level epitaxy of 3C-SiC by low pressure vapour deposition with alternating gas supply

Hiroyuki Nagasawa, Yuta Yamaguchi · Thin Solid Films · 1993 · 68 citations

Engineering, Materials Engineering, Materials Science +16

Self-limiting growth on the β-SiC(001) surface

Shiro Hara, Y. Aoyagi, M. Kawai et al. · Surface Science · 1992 · 36 citations

Natural Sciences, Materials Engineering, Materials Science +12