Temperature Dependence of Phase-Change Random Access Memory Cell

Abstract

The temperature dependences of phase-change random access memory (PCRAM) cells on different Ge–Sb–Te phase-change recording materials are studied and compared. A Ge2Sb2Te5 phase-change film has a larger resistance margin and a higher thermal stability than Ge1Sb2Te4 and Ge1Sb4Te7 films. The set resistance, reset resistance, resistance margin and threshold voltage of PCRAM cells decrease with increasing temperature. A Ge2Sb2Te5 PCRAM cell has a higher thermal stability of threshold voltage than Ge1Sb2Te4 and Ge1Sb4Te7 PCRAM cells.