Nonequilibrium characteristics of the gate-controlled diode in 6H-SiC

Abstract

N+-P gate-controlled diodes are fabricated in the wide band gap semiconductor 6H-SiC by thermal oxidation and ion implantation of nitrogen. Room temperature capacitance-voltage characteristics display a ‘‘hook and ledge’’ hysteresis, which has been observed in Si gate-controlled diodes at 77 K. In these samples of p-type doping 2.8×1016 cm−3, the surface state density is about 4×1012 cm−2.