Japanese Journal of Applied Physics · 1992 · 30 citations · 13 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsQuantum WellsSemiconductor Crystal GrowthSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor SurfacesSurface PhysicsHeterostructuresInterface ControlMetalorganic Vapor Phase EpitaxyQuantum Well GrowthQuantum Well HeterostructuresQuantum Well StructuresSubstrate Temperature EffectsTwo-dimensional Semiconductor Heterostructures
The exchange reaction of group V atoms was monitored in situ by surface photo-absorption on a submonolayer scale during metalorganic vapor phase epitaxial growth of pseudomorphic InAs/InP heterostructure on (001) InP substrates. About a 0.4-monolayer As/P exchange reaction was observed after arsine was supplied at 0.2 µmol/s onto the In surface of InP at a substrate temperature ( T s ) of 400°C. At a T s of 350°C, this As/P exchange reaction was suppressed to less than 0.1 monolayer. In contrast, the P/As exchange reaction was less than 0.1 monolayer below 400°C. The benefits of in situ control were shown by growing pseudomorphic InAs/InP single and multiple quantum wells with 1-12 InAs well layers at T s =350°C and characterizing them by cross sectional transmission electron microscopy, photoluminescence, and double crystal X-ray diffraction. Metallurgically abrupt and atomically flat heterostructures without dislocations were grown up to 10 monolayer (ML) of InAs well, which corresponds to the critical layer thickness.
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