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SEU Sensitivity of Power Converters with MOSFETs in Space
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1987
Year
Electrical EngineeringSeu SensitivityEngineeringHardware ReliabilityPower DeviceIron ParticlesPower Semiconductor DeviceSingle Event EffectsCircuit ReliabilityPower ElectronicsPower MosfetsMicroelectronicsIron SpectrumDevice Reliability
This paper presents the results of an investigation into the survivability of power MOSFETs in space. Seventy-two of these devices are presently in geosynchronous orbit on board six communications spacecraft, and operating at 70V which is 70% of the nominal breakdown voltage. No failures have occurred after 94536 device-days in space. The irradiation of discrete parts as well as the prototype flight power converter, containing the same part types, by iron particles with a LET of 10 MeV-cm2/mg, and an iron spectrum with a maximum LET of 26 showed these Hi-Rel ("S") flight parts to be relatively harder than the same type of devices previously ground tested. This appears to be the explanation for the lack of failures in space.