G. J. Brucker - Concepedia

Author

G. J. Brucker

Goddard Space Flight Center

Also Known As

Brucker, G. J., G. BRUCKER, G. Brucker, G. J. Brucker, G.J Brucker, G.J. Brucker, George J. Brucker

124

Publications

940

Citations

H-Index

119

Concepts

All Affiliations

Goddard Space Flight Center RCA (United States)Princeton University United States Naval Research Laboratory National Security Agency

About

G. J. Brucker is an author at Goddard Space Flight Center specializing in microelectronics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	33	665
2	Medicine	6	6	130
3	Natural Sciences	4	4	157
4	Health Sciences	3	3	42
5	Education	1	1	19

G. J. Brucker

Publications

745

Citations

H-Index

Page 1

	Year	Citations
Decay Times of Fluorescent Substances Excited by High-Energy Radiation H. Kallmann, G. J. Brucker Physical Review PhotochemistryPhysicsNatural SciencesSpectroscopyLuminescence Property	1957	80
Variation in SEU sensitivity of dose-imprinted CMOS SRAMs E. G. Stassinopoulos, G. J. Brucker, O. Van Gunten, IEEE Transactions on Nuclear Science EngineeringNuclear PhysicsRadiation PhysicsRadiation EffectRadiation Exposure	1989	47
The Damage Equivalence of Electrons, Protons, and Gamma Rays in MOS Devices G. J. Brucker, E. G. Stassinopoulos, O. Van Gunten, IEEE Transactions on Nuclear Science EngineeringRadiation EffectRadiation ExposureSemiconductor DeviceRadiation Damage Effects	1982	41
Charge generation by heavy ions in power MOSFETs, burnout space predictions and dynamic SEB sensitivity E. G. Stassinopoulos, G. J. Brucker, P. Calvel, IEEE Transactions on Nuclear Science EngineeringPower EngineeringEnergy EfficiencyPower Electronic SystemsPower Electronics	1992	37
Solar flare proton evaluation at geostationary orbits for engineering applications E. G. Stassinopoulos, G. J. Brucker, D. Nakamura, IEEE Transactions on Nuclear Science GeophysicsEffective Energy ThresholdsSolar VariabilityGeospace PhysicsSolar Terrestrial Environment	1996	36
Application of a diffusion model to SEE cross sections of modern devices [DRAMs] Edward C. Smith, E. G. Stassinopoulos, Kenneth A. LaBel, IEEE Transactions on Nuclear Science Cross SectionEngineeringDiffusion ModelCross SectionsIon Beam	1995	35
Effects of package geometry, materials, and die design on energy dependence of pMOS dosimeters G. J. Brucker, S. Kronenberg, Frederick J. Gentner IEEE Transactions on Nuclear Science EngineeringSilicon On InsulatorSemiconductor DevicePackage GeometryAdvanced Packaging (Semiconductors)	1995	30
Ionization and Displacement Damage in Silicon Transistors G. J. Brucker, W. J. Dennehy, Andrew Holmes‐Siedle IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationEngineeringDisplacement DamagePhysics	1966	29
Charge collection at large angles of incidence (CMOS SRAM) P.J. McNulty, W.J. Beauvais, Robert A. Reed, IEEE Transactions on Nuclear Science Electrical EngineeringSingle Event UpsetCmos SramNuclear PhysicsPhysics	1992	26
Electrical Studies of Electron-Irradiated Lithium-Containing<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Silicon G. J. Brucker Physical Review EngineeringRadiation Materials ScienceSilicon On InsulatorMath XmlnsIon Implantation	1969	24

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