Scanning Probe Microscope Lithography of Silicon Using a Combination of a Carbon Nanotube Tip and a Polysilane Film as a Mask

Abstract

Si lithography with the line width as small as 40 nm has been demonstrated using polysilane masks prepared by scanning probe microscope lithography using a carbon nanotube tip. It has been evidenced that moisture is essential for the direct lithography of the polysilane film induced by the electron injection from the tip. The contact mode and tapping mode lithographic processes are examined for preparing the polysilane masks. It is also found that approximately 5-nm-thick polysilane films work well as a mask for a chemical etching process of Si without significant degradation.