Journal of Physics D Applied Physics · 2011 · 10 citations · 26 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesQuantum DotsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsCurrent DensityLow-threshold Current LasersMolecular Beam EpitaxyPit DensityPulsed OperationQuantum Dot Laser DiodesQuantum Dot LasersSemiconductor Laser Diodes
Molecular beam epitaxy growth of GaAs-based long-wavelength metamorphic InAs/InGaAs quantum dots (QDs) is investigated. With optimized multi-step-graded InGaAs metamorphic buffer layers and growth conditions, room temperature 1.46 µm emission from InAs/In 0.15 Ga 0.85 As QDs is realized, and broad-area laser diodes are fabricated with a very low etch pit defect density of less than 5.0 × 10 3 cm −2 . The lasers operate under pulsed operation mode at room temperature with a low threshold current density of 146.7 A cm −2 .
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40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
Richard R. King, D. C. Law, K. Edmondson et al. · Applied Physics Letters · 2007 · 1.2K citations · Full text