Applied Physics Letters · 1990 · 23 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsOptical Properties Of SemiconductorsOptical SourcesSemiconductor Device MaterialsSemiconductor LasersEquivalent Series ResistanceLow-threshold Current LasersOhmic ContactsSemiconductor Laser DiodesSeries ResistanceSingle-mode Semiconductor LasersThreshold BehaviorVertical-cavity Surface-emitting Lasers
Continuous-wave room-temperature operation is reported for the first time of vertical cavity current injection semiconductor lasers with a metallic reflector. The GaAs/(AlGa)As lasers have low-threshold currents of 8 mA for 8-μm-diam contacts and threshold current densities of 9.5 kA/cm2. Single longitudinal mode and bimodal operation are obtained for short and long Fabry–Perot étalons, respectively. The spectral width of the single-mode laser line is 0.1 Å. The laser structures have a very small series resistance which results in a voltage drop of 1.8 V along the diodes at lasing threshold.
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GaInAsP/InP Surface Emitting Injection Lasers
H. Soda, Kenichi Iga, Chiyuki Kitahara et al. · Japanese Journal of Applied Physics · 1979 · 544 citations
Vertical cavity single quantum well laser
J. L. Jewell, K. F. Huang, K. Tai et al. · Applied Physics Letters · 1989 · 90 citations
Fabrication of microlasers and microresonator optical switches
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Delta-doped ohmic contacts to <i>n</i>-GaAs
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