Sensing characteristics of in-plane polarized lead zirconate titanate thin films

Baomin Xu, Ronald G. Polcawich, Susan Trolier‐McKinstry, Yaohong Ye, L. E. Cross, Jonathan Bernstein, Raanan A. Miller

Applied Physics Letters · 1999 · 55 citations · 8 references

Concepts

Abstract

The sensing characteristics of in-plane polarized lead zirconate titanate (PZT) thin films were studied and compared with the through-thickness polarized PZT films. The in-plane polarized PZT films were deposited on ZrO2-passivated silicon substrates and had interdigitated electrode systems on the top surface; hence, they can be polarized in the film plane. This in-plane polarization configuration separates the electrode spacing and film thickness as independent variables; thus, the voltage sensitivity can be increased by using wider electrode spacing even for fixed film thickness. The results show that for films with a thickness of 1 μm the voltage sensitivity of in-plane polarized PZT films can be more than 20 times higher than that of the conventional, through-thickness polarized PZT films which were deposited on Pt-buffered silicon substrates.

References

8